Yangjie Technology Launches 1200V 40mΩ SiC MOSFET

With the rapid development of the photovoltaic inverter market in 2021, the demand for silicon carbide power devices has surged. Yangjie Technology's 1200V 40mΩ SiC MOSFET has the characteristics of high temperature resistance, fast switching, and low loss, and is suitable for high-voltage and high-frequency application scenarios. This MOSFET has passed rigorous reliability tests and is available in a variety of packaging forms such as TO247AB and TO247-4L. It is suitable for photovoltaic inverters, electric vehicles, and charging piles.