The high-performance and high-reliability silicon carbide MOSFET developed by China Electronics Technology Group Corporation 55 Institute passed the technical appraisal

China Electronics Technology Group Corporation 55th Institute has successfully developed high-performance and highly reliable silicon carbide MOSFET technology, and has achieved mass production in the fields of new energy vehicles, photovoltaic energy storage, smart grids, etc. This technology is at the international advanced level and provides a strong guarantee for the security of the silicon carbide power device supply chain. In the future, Guoji South and 55th Institute will continue to promote the key core technology research and industrial application of silicon carbide MOSFET chips and power modules for new energy vehicles.