The first phase of the YOFC advanced third-generation semiconductor power device R&D and production base project will invest RMB 10 billion
360
MOSFET
SiC MOS
SiC MOSFET
invest
link
power
360
design
base
ring
sign
tax
semiconductor
SiC
project
2024-12-23 12:05
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The first phase of Changfei's advanced third-generation semiconductor power device R&D and production base project has a total investment of 10 billion yuan and can produce 360,000 SiC MOSFET wafers annually, including epitaxy, device design, wafer manufacturing, packaging and other links.
