Jiangsu Qisi Electronic Technology Co., Ltd. High Power Device Project Introduction

Jiangsu Qisi Electronic Technology Co., Ltd. invested in the high-power device project in Gaoyou Economic Development Zone, with a total planned investment of 900 million yuan, mainly producing high-power devices, SiC, IGBT module packaging and testing and other products. The project will be implemented in two phases, with an investment of 480 million yuan in the first phase. It is expected to start mass production in August this year, with an annual output of 330 million discrete devices and 1.2 million modules, filling the gap in the high-power device field of Gaoyou's semiconductor industry.