The third-generation semiconductor silicon carbide material production base of Tianke was put into operation with a total investment of 3.27 billion yuan

The third-generation semiconductor silicon carbide material production base of Tianke has been put into use in Bao'an District with a total investment of 3.27 billion yuan. The base will focus on the layout of 6-inch silicon carbide single crystal substrates and epitaxial production lines, and it is expected that the substrate and epitaxial production capacity will reach 250,000 pieces this year.