Anhui Microchip Changjiang Semiconductor Materials Co., Ltd. successfully developed an 8-inch silicon carbide single crystal ingot

Anhui Microchip Changjiang Semiconductor Materials Co., Ltd. announced that it has successfully developed an 8-inch silicon carbide single crystal ingot in the first quarter of 2024. The crystal has excellent quality, a smooth surface without defects, a thickness of 18mm, and uniform dislocation distribution, without aggregation and stress slip grain boundaries.