Huawei discloses new SiC crystal patent

Huawei Technologies Co., Ltd. recently disclosed a new patent titled "Baffle, Chip, SiC Crystal, Crystal Growth Furnace and Growth Method", which aims to optimize the crystal quality in the field of silicon carbide crystal technology. The patent proposes a new crystal growth method, which changes the movement direction of the gas source by setting a baffle in the crystal growth furnace, so that it moves obliquely upward toward the small face of the seed crystal, thereby increasing the growth rate and thickness of the crystal and reducing the microtube density. In addition, the patent also suggests using low-density graphite as a baffle material to improve crystal quality.