Fuzhou Gallium Valley Semiconductor Company 1 sescenti Yuan ut focus in R&D et productio GaN epitaxial lagana investivit

Fuzhou Gallium Vallis Semiconductor Co, Ltd consilia collocare 1 miliarda Yuan in investigatione, progressu et productione materiae tertiae generationis semiconductoris GaN lagana epitaxialis. Societas mense Iulio anno 2022. Eius praecipua producta includunt gallium nitridum in silicon (GaN on Si), gallium nitridum in carbide silicon (GaN on SiC) et gallium nitridum in sapphiro (GaN on Sapphire).