Tongguang Co., Ltd. has achieved a technological breakthrough in the field of silicon carbide substrates

Tongguang Co., Ltd., founded in 2012 and located in Baoding High-tech Development Zone, focuses on the research and development and production of silicon carbide substrates. The company works closely with the Institute of Semiconductors of the Chinese Academy of Sciences and has started mass production of 4-inch silicon carbide wafers since 2015. At present, its 6-inch conductive substrates have reached the application standards of automotive-grade power devices and are ready for mass production. At present, Tongguang Co., Ltd.'s production capacity is growing at a rate of doubling every year. According to the plan, the company's internal production capacity will reach 300,000 pieces next year (ie 2024), and plans to reach 500,000 to 600,000 pieces in 2025.