Tongguang Co., Ltd. completed 1.5 billion yuan in F round financing to accelerate the layout of silicon carbide single crystal substrates

Hebei Tongguang Semiconductor Co., Ltd. ("Tongguang Co., Ltd.") announced the completion of its F round of financing. The scale of this round of financing is 1.5 billion yuan, led by Shenzhen Capital Group Manufacturing Transformation and Upgrading New Materials Fund ("Shenzhen Capital Group New Materials Fund") and Beijing-Tianjin-Hebei Coordinated Development Industry Investment Fund ("Beijing-Tianjin-Hebei Industry Investment Fund"), and jointly invested by Baoding High-tech Zone Venture Capital Co., Ltd. ("High-tech Venture Capital") and Hebei Industry Investment Strategic New Industry Development Center ("Hebei Industry Investment"), with a valuation of over 10 billion yuan. In April this year, Tongguang's 8-inch conductive silicon carbide crystal samples have been produced, and it is expected to achieve small-scale production by the end of the year. It can be used in the field of electric vehicles to greatly improve the endurance.