The first phase of Jingyitong Semiconductor IGBT project has been capped, with an estimated annual output value of 1 billion yuan

The first phase of the IGBT module material and packaging and testing module industrial park project of Jingyitong (Sichuan) Semiconductor Technology Co., Ltd. has been successfully capped. The total investment of the project is RMB 1.2 billion, and the annual output value is expected to reach RMB 1 billion. The project is located in Baima Electronic Information Industrial Park, Neijiang High-tech Zone, and is expected to be completed and put into use in April next year.