RongSi Semiconductor's 1200V 40mΩ SiC MOSFET Passes AEC-Q101 Automotive Grade Assessment

The 1200V 40mΩ SiC MOSFET product independently developed by Rongsi Semiconductor has successfully passed the AEC-Q101 automotive-grade test and HV-H3TRB stringent reliability assessment. It has also passed the introduction test of leading manufacturers in the new energy industry and has been delivered in mass production.