Rongsi Semiconductor's silicon carbide MOSFET passed the AEC-Q101 automotive-grade assessment

The 1200V 40mΩ SiC MOSFET NC1M120C40HT independently developed by Rongsi Semiconductor has successfully passed the AEC-Q101 automotive-grade test and HV-H3TRB strict reliability assessment, and has been delivered in mass production. This series of products has excellent stability and reliability, and can meet the application needs of new energy vehicles, photovoltaic inverters and other fields.