Hantian Tiancheng completes the development of 8-inch silicon carbide epitaxial process technology

Hantian Tiancheng Electronic Technology (Xiamen) Co., Ltd. announced that its R&D team has completed the technical development of 8-inch silicon carbide epitaxial process with independent intellectual property rights, and has the mass production capacity of domestic 8-inch silicon carbide epitaxial wafers. The 8-inch silicon carbide epitaxial wafers produced by Hantian Tiancheng have excellent technical indicators, and the yield rate of 2mm*2mm die reaches more than 98%.