Introduction to the Features of Nanochip's Silicon Carbide MOSFET Products

Naxinwei's silicon carbide MOSFET product NPC060N120A has the following features: a wider gate drive voltage range (-8~22V), supporting +15V and +18V drive modes; in +18V mode, RDSon can be reduced by 20%; excellent threshold voltage consistency, Vth remains between 2.0V~2.8V in the range of 25°C~175°C; the body diode forward voltage drop is very low and highly robust; 100% avalanche test improves overall reliability and strong shock resistance.