Sandia National Laboratories Demonstrates 1.2kV Automotive-Grade Vertical GaN MOSFET

The U.S. Department of Energy (DOE) revealed that Sandia National Laboratories has made a major breakthrough in automotive-grade vertical gallium nitride devices, demonstrating a 1200V GaN MOSFET, the first device to integrate hafnium dioxide (HfO2) gate dielectrics. Sandia National Laboratories' process successfully achieved a record low gate leakage and demonstrated that its GaN MOSFET has an on-current density that is an order of magnitude higher than the most advanced existing GaN and SiC devices.