Sanan STMicroelectronics consilium expectatur producere 480,000 8 inch siliconis carbide autocineti gradus MOSFET potestas eu annuatim

2024-12-24 23:41
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Tota obsidetio destinata pro Sanan STMicroelectronics consilium est circiter US$3.2 miliarda, cum propositum assequendi capacitatis annuae productionis 480.000 8 inch siliconis carbidi autocineti gradus virtutis MOSFET xxxiii.