The value distribution of the silicon carbide industry chain and the importance of epitaxy

In the silicon carbide industry chain, substrates and epitaxy, as upstream links, account for 47% and 23% of the cost structure of silicon carbide power devices, respectively. The production barriers of high-quality silicon carbide epitaxial wafers are high, and the downstream demand for global silicon carbide devices is strong, resulting in a tight supply of high-quality silicon carbide epitaxial wafers. The epitaxial layer can eliminate certain defects in the substrate and arrange the lattice neatly, which has a decisive influence on the performance of the device.