Hanxin Technology's SiC MOSFET and SiC JBS products have obtained AEC-Q101 automotive certification

Hanxin Technology's fourth-generation silicon carbide diode H4S120G020 and second-generation silicon carbide MOSFET H2M120F080 have successfully passed AEC-Q101 automotive-grade certification. These products are suitable for power conversion devices in the fields of new energy vehicles, charging piles, rail transportation and smart grids.