Xingan Technology's 1200V/80mΩ SiC MOSFET obtains automotive-grade certification

The 1200V/80mΩ SiC MOSFET device independently developed by Xingan Technology has passed the domestic third-party reliability certification and successfully obtained the full set of AEC-Q101 automotive-grade reliability certification. This certification reflects the excellent performance of Xingan Technology's silicon carbide MOSFET device products in terms of reliability and stability.