Feizeng Semiconductor's independently developed SiC MOSFET has obtained AEC-Q101 automotive certification

1200V 650V AEC-Q H3TRB MOSFET Semi SiC MOS SiC MOSFET test reliability SiC develop EC
2024-12-25 11:22
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The 1200V 35/70/160mΩ and 650V 30/45/60mΩ automotive-grade SiC MOSFET devices independently developed by Feizeng Semiconductor have successfully obtained the AEC-Q101 automotive-grade reliability certification and have passed the 960V high-voltage H3TRB rigorous test.


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