Jiangsu Chengsheng Technology launches Qisi high-power device project

On January 15, Jiangsu Chengsheng Technology successfully held a press conference for the Qisi high-power device project in Gaoyou, Yangzhou, Jiangsu. The project plans to invest a total of 900 million yuan, mainly producing high-power devices, SiC, IGBT module packaging and testing and other products. The project is located in Gaoyou Economic Development Zone and has a self-built plant of 30,740 square meters, of which 23,000 square meters are used for production workshops. The project is divided into two phases, with an investment of 480 million yuan in the first phase. It is expected to be mass-produced in August this year, with an annual output of 330 million discrete devices and 1.2 million modules.