Annual production of 400,000 pieces of domestic silicon carbide substrates to expand production

In order to meet the market demand for high-performance semiconductor substrate materials, Jiangxi Gangfeng Technology Co., Ltd. plans to invest in the construction of a third-generation semiconductor substrate epitaxial project (Phase I) with an annual output of 400,000 pieces. After completion, the project is expected to have an annual output of 400,000 pieces of third-generation semiconductor substrate epitaxial.