Ningbo Hesheng New Materials Co., Ltd. displays 6-8 inch conductive silicon carbide substrates and epitaxial wafers

Ningbo Hesheng New Materials Co., Ltd. displayed 6-8 inch conductive silicon carbide substrates and epitaxial wafers at the exhibition. The company was established in 2018 and focuses on the research, development, production and sales of third-generation semiconductor S1C substrates and epitaxy. It is currently building a conductive 6-inch and 8-inch silicon carbide substrate and epitaxial wafer production line.