Huaxia Semiconductor GaN project habitavit in Ningbo

Die 19 Aprilis Huaxia Semiconductor Societatis feliciter contractum cum Beilun Development Zona Digital Economy Development Bureau to launch a GaN project in Ningbo. Huaxia Semiconductor R&D intendit et productionem semiconductoris ambitus integrati, inclusa producta sicut metalla elementaria summus puritatis et summae munditiae componit.