Peking University team develops GaN-based power device with breakdown voltage greater than 10,000 volts

Faced with the challenges brought by high-field trapping effect and electric field concentration effect, the research team of Peking University proposed a new type of active passivation transistor and successfully developed an enhanced GaN-based power device with a breakdown voltage greater than 10,000 volts. This achievement is the first in the world and is of great significance for promoting the application of GaN-based power devices.