Peking University research team breaks through the technical bottleneck of GaN-based power devices

In the past five years, the research team of the School of Integrated Circuits and the Advanced Innovation Center of Integrated Circuits of Peking University has successfully solved the three major technical challenges of GaN-based power devices: frequency bottleneck, reliability bottleneck and voltage resistance bottleneck. Through innovative methods, they have achieved high-voltage bridge integration and low-voltage CMOS integration, and developed 10,000-volt-class GaN-based high-voltage devices. These research results are in a leading position worldwide and have published five high-quality papers at the International Electron Devices Conference.