Hitachi and Sagar Semi reach cooperation to jointly develop SiC/IGBT and other devices

Hitachi Power Semiconductors (HPSD), a subsidiary of Hitachi Group, has signed a cooperation agreement with India's Sagar Semiconductors (Sagar Semi) to jointly carry out the research and development and sales of high-power devices such as IGBT and SiC, as well as the technology transfer of high-voltage diodes. Sagar Semi plans to build a high-voltage power semiconductor factory, and Hitachi Power Semiconductors has agreed to consider the transfer of related facilities and related manufacturing technologies for the entire front-end and back-end processes. In addition, Hitachi Power Semiconductors will also help Sagar Semi train its employees in India and Japan, and the annual production capacity of the factory will reach 100 million in the future. The two companies will focus on developing tailor-made power semiconductor solutions such as SiC/IGBT for emerging technologies in India, focusing on industries such as white goods, energy storage solutions and railways.