Infineon plans to launch 400V low-voltage SiC MOSFET

Recently, Infineon announced that it will launch a 400V low-voltage SiC MOSFET, aiming to compete with traditional Si and GaN power semiconductors and expand market share. Although the industry is surprised by this, because no company has developed similar products before, Infineon is still committed to solving related technical problems, such as channel resistance, short circuit control, gate oxidation, etc.