Infineon Technologies Launches First 2000V CoolSiC™ MOSFET Discrete Device

Infineon Technologies recently released the first CoolSiC™ MOSFET discrete device with a breakdown voltage of 2000V on the market. The device has low switching losses and uses a TO-247PLUS-4-HCC package with a creepage distance of 14mm and an electrical clearance of 5.4mm. These features make it very suitable for applications in 1500VDC photovoltaic string inverters, energy storage systems, and electric vehicle charging.