Hebei Puxing Electronic Technology launches 6-inch low-density defect silicon carbide epitaxial wafer industrialization project

Hebei Puxing Electronic Technology Co., Ltd. announced the launch of the "6-inch low-density defect silicon carbide epitaxial wafer industrialization project", which will conduct the first environmental impact assessment information disclosure. The total investment of the project is 350.7016 million yuan. It will be renovated and expanded in the company's No. 1 plant with a construction area of ​​about 4,000 square meters, and 116 sets of silicon carbide (SiC) epitaxial equipment and supporting equipment will be purchased to form a 6-inch low-density defect SiC epitaxial material production line. After the completion of the project, it is expected to achieve an annual production capacity of 240,000 SiC epitaxial wafers.