JITA Semiconductor and Ningbo Anjian Semiconductor have reached a cooperation to jointly develop SiC devices

JITA Semiconductor has reached a cooperation agreement with Ningbo Anjian Semiconductor Co., Ltd. (Anjian Semiconductor) to jointly develop SiC devices. After visiting Anjian Semiconductor's module production line, the two parties discussed product requirements and subsequent development projects, and decided to accelerate the development of planar silicon carbide (SiC) MOS devices and work together to develop a new generation of trench SiC MOS devices. At the same time, the two parties will also start the development of high-end FRD products based on 8-inch thin films and hydrogen implantation processes.