Xinchen Semiconductor novum apparatum epitaxialem in productione feliciter posuit

Xinchen Semiconductor (Suzhou) Co., Ltd. nuper feliciter in novo apparatu epitaxiali producendo posuit, gallium arsenide (GaAs) et indium phosphidis (InP) optical systematis materialibus mixti quaternarii compositi. Societas massam productionis epitaxialis lagani in spatio ab 760nm ad 1700nm confecit, et epitaxialis uniformitas intra 2nm extra centrum manentem necem pervenit. Laser chip lagana epitaxialis typica, ut 808, 850, 905, 940, 1064, 1550 et 1654nm, comprobata sunt a VCSEL vel DFB assulis in suis lineis productionibus.