Samsung Electronics successfully developed 400-layer stacked NAND Flash technology

According to Korean media reports, Samsung Electronics has successfully completed the development of 400-layer stacked NAND Flash technology in its semiconductor research institute. This technology has been transferred to large-scale production at Factory 1 in the Pyeongtaek Park. The development of this technology will enable Samsung to maintain its leading position in NAND Flash technology, ahead of SK Hynix, which has announced plans to mass-produce 321-layer NAND Flash. Samsung Electronics plans to detail its 1Tb capacity 400-layer stacked TLC NAND Flash at the International Solid-State Circuits Conference in February 2025, and expects to start mass production in the second half of 2025.