Hebei Tongguang Semiconductor Co., Ltd.'s SiC substrate project and powder project successfully passed acceptance

Recently, the SiC substrate project and powder project of Hebei Tongguang Semiconductor Co., Ltd. successfully passed the acceptance. The SiC substrate project is the third phase construction project of the company's first SiC substrate production line, located in the National High-tech Industrial Development Zone of Baoding City. After nearly seven years of development, the acceptance was successfully completed in February 2024, marking that the production line has been fully put into production.