GF receives $9.5 million in federal funding to accelerate gallium nitride semiconductor production

On December 4, GF again received $9.5 million in federal funding from the U.S. Department of Defense's Trusted Access Program Office (TAPO) to advance the production of silicon-based gallium nitride (GaN) semiconductors at its plant in Essex Junction, Vermont, U.S. The funding is the latest investment by the U.S. government in GF's GaN project in Vermont.