Nexperia launches high-performance SiC MOSFET discrete devices in D2PAK-7 package

Nexperia recently launched a 1200V silicon carbide (SiC) MOSFET discrete device in a D2PAK-7 package with 30, 40, 60 and 80mΩ RDson value options. This product is a new product after the launch of the TO-247 packaged SiC MOSFET at the end of 2023, and will further expand the product line. The new device meets the market demand for high-performance SiC switches and is suitable for industrial applications such as electric vehicle charging, uninterruptible power supplies, solar energy and energy storage systems.