Hong Kong Science and Technology Parks and JP Semiconductor signavit memorandum cooperationis

Hong Kong Science and Technology Parks and Jie Square Semiconductor (Shanghai) Co., Ltd. memorandum cooperationis signaverunt. Duae partes globalem R&D constituent centrum in tertia generatione semiconductores in Hong Kong Scientia Park constituent, et in ostio aperiunt. Hong Kong primus SiC 8-inch provectus verticaliter integratus laganum fab. Tota collocatio in consilio est circiter HK$6,9 sescenti. Exspectatur ut 240,000 lagana SiC quotannis anno 2028 producere, agitans valorem annuum plus quam HK$11 miliardis et plus quam DCC jobs creaturus.