Xiamen Municipal Government and Hangzhou Silan Microelectronics Signed a Strategic Cooperation Agreement

Xiamen Municipal Government, Haicang District Government and Hangzhou Silan Microelectronics signed a cooperation agreement to build an 8-inch SiC power device chip manufacturing production line in Haicang District, mainly producing SiC-MOSFET. The total investment in the first phase is 7 billion yuan, and the second phase is 5 billion yuan. Silan Microelectronics has established a project company in Haicang District with a registered capital of 60 million yuan.