Analysis of Difficulties in Manufacturing 8-inch SiC Wafers

One of the difficulties in manufacturing 8-inch SiC is the growth of ingots. When the diameter is expanded from 6 inches to 8 inches, the difficulty of ingot growth will increase exponentially. The quality requirements of 8-inch seed crystals are higher, and it is necessary to solve the problems of uneven temperature field, gas-phase raw material distribution and transportation efficiency caused by large size, and crystal cracking caused by increased stress.