Anjian Semiconductor Virtutis Semiconductor Module Packaging Project Signatum et Habitatum in Zhejiang
AION Y
1200V
2021
IGBT
est
MOSFET
Pro
Semi
Anjian Semiconductor
test
testa
Yuan
Zhejiang
bus
bus
bus
semiconductor
Haining
project
2024-12-27 19:08
161
Die XX mensis Maii Anjian Semiconductor nuntiavit eius "potestatem semiconductorem moduli in project packaging" signatum et in Zona Oeconomica Development Haining, Zhejiang, cum tota obsidione C decies Yuan. Propositum propositum est IGBT et SiC moduli fabricationem autocineti-gradi aedificare. Semiconductor Anjian mense Iulio 2021. Nunc massam trium productorum linearum productionem consecutus est: IGBT, SGT-MOS, SJ-MOS, et 1200V-17mΩ SiC MOSFET cum iuribus proprietatis omnino independens.
