Micron plans to build a new EUV lithography DRAM memory wafer fab in Hiroshima

Micron plans to invest 600-800 billion yen to build a new DRAM memory wafer fab in Hiroshima, Japan. The fab will introduce EUV lithography equipment and is scheduled to start construction in early 2026, and is expected to be officially put into production at the end of 2027. Micron will officially introduce EUV lithography technology in the next-generation 1-gamma (nm) node that will be mass-produced in 2025.