Tianke Heda starts the second phase of the construction of the second-generation semiconductor silicon carbide substrate industrialization base

On November 12, Beijing Tianke Heda Semiconductor Co., Ltd. announced that its "Phase II Project of the Third Generation Semiconductor Silicon Carbide Substrate Industrialization Base Construction" in Daxing District, Beijing has officially started. The project plans to build a new 6-8 inch silicon carbide substrate production line and R&D center. It is expected to produce about 371,000 conductive silicon carbide substrates per year after it goes into production, including 236,000 6-inch conductive silicon carbide substrates and 135,000 8-inch conductive silicon carbide substrates.