Tianke Heda secundae periodi semiconductor pii carbide substratae industrialisationi basi constructionis project

Die 12 Novembris Beijing Tianke Heda Semiconductor Co., Ltd. nuntiatum est eius "Phase II Project Constructionis tertii-generationis Semiconductoris Siliconis Carbide Substratae Industrialisationis Base" in Daxing District Beijing publice deductam esse. Proiectum consilium ad novam 6-8-inch carbidam siliconis substratam lineam productionis et centrum R&D aedificandam expectatur ut circiter 371000 carbidi carbidi conductivi per annum substratum, postquam in exilium ponatur, inter 236,000 6-inch carbide substrata carbidi conductive silicon et 13.5 Milia 8-inch prolixa carbide substrata pii.