Mitsubishi Electric expands silicon carbide power semiconductor production

Mitsubishi Electric announced that it will double its investment plan to approximately 260 billion yen over the next five years, mainly for the construction of new wafer fabs to increase the production of silicon carbide (SiC) power semiconductors. The company started construction of a new 8-inch SiC factory in Kumamoto Prefecture, Japan, and plans to put it into operation in April 2026.