Hangzhou Gallium Semiconductor has made a major breakthrough in gallium oxide substrate technology

In December 2024, Hangzhou Gallium Semiconductor Co., Ltd. made a major breakthrough in the field of ultra-wide bandgap semiconductor materials. The company cooperated with downstream customers to conduct in-depth device verification work on the gallium semiconductor (010) surface gallium oxide semi-insulating substrate. An enhancement-mode transistor with excellent performance was successfully prepared, with a breakdown voltage as high as 2429V. Compared with the device verification results of imported substrates, the performance indicators have been significantly improved.