STMicroelectronics plans to build a new 8-inch silicon carbide manufacturing site in Italy

STMicroelectronics announced that it will build a new 8-inch silicon carbide (SiC) power device and module manufacturing base in Catania, Italy on June 6, 2024. The base will include manufacturing, packaging and testing facilities, and together with the existing SiC substrate manufacturing facilities, it will form a complete silicon carbide park. The project is expected to start operation in 2026 and reach full capacity by 2033, when wafer output will reach 15,000 wafers per week. The investment in the entire project is expected to be 5 billion euros, of which the Italian government will provide approximately 2 billion euros in financial support.