Shuoke Crystal Company successfully developed a 12-inch high-purity semi-insulating silicon carbide single crystal substrate

On the last day of 2024, the official account of the China Electronic Materials Industry Association announced that Shanxi Shuoke Crystal Co., Ltd., a subsidiary of China Electronics Technology Group Corporation Semiconductor Materials Co., Ltd., has successfully developed a 12-inch (300mm) high-purity semi-insulating silicon carbide single crystal substrate. At the same time, it has also successfully developed a 12-inch (300mm) N-type silicon carbide single crystal substrate.