Ruichuang Micro-Nano has achieved remarkable results in the research of microwave power amplifiers, promoting innovation in the automotive-related industries

Ruichuang Micro-Nano's holding subsidiary Ruisi Microsystems has made significant progress in the research of GaN-based high-power S-band microwave power amplifiers. They successfully revealed the performance degradation mechanism of AlGaN/GaN HEMT devices in high-temperature and high-power applications, and by optimizing the device structure, the gain of the power amplifier was increased by 1dB and the efficiency was increased by 2.6%. This breakthrough not only proves Ruisi Microsystems' strong R&D capabilities in the field of microwave semiconductors, but also lays a solid foundation for subsequent product development and mass production.