The silicon carbide substrate industry in North China and Central China is developing rapidly and has broad prospects in the future

North China and Central China also play a pivotal role in the SiC substrate industry. In North China, companies such as Tianke Heda, Tongguang Co., Ltd. and Shuoke Crystal have established production lines with an annual output of 100,000 SiC substrates in Daxing District, Beijing, Baoding, Hebei and Taiyuan, Shanxi, respectively, showing the region's strong development momentum in this high-tech industry. Central China is not to be outdone. Sanan Optoelectronics' Sanan Semiconductor Industrial Park in Changsha, Hunan already has an annual production capacity of more than 250,000 SiC substrates, and its Phase II project is expected to further increase production capacity in 2024 to 500,000 6-inch SiC substrates per year. Looking ahead, Shandong Province's annual production capacity of SiC substrates is expected to increase to 700,000 pieces in 2026. The realization of this goal will further consolidate its leading position in the SiC substrate industry in the country and even the world.